PART |
Description |
Maker |
TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V http://
|
TC58NVG5D2FTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
H27U1G8F2B |
1 Gbit (128 M x 8 bit) NAND Flash
|
Hynix
|
TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位,2112 Byte/1056字的页面.8V/3VNAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
EN27LN4G08 |
4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送,交流2.7千兆/ Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s, Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|